横向双极晶体管的外部基面设计，以获得更好的f/sub T/ vs BV/sub CEO/解决方案

Proceedings of the 12th IEEE Mediterranean Electrotechnical Conference (IEEE Cat. No.04CH37521) Pub Date : 2004-05-12 DOI:10.1109/MELCON.2004.1346766

M. Koričić, P. Biljanovic, T. Suligoj

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引用次数: 0

摘要

在现代快速双极晶体管设计中，高频性能和电流工作水平与击穿电压相权衡。外源基极受体和本征基极受体之间的电荷共享减小了本征晶体管的最大电场，提高了BV/sub CEO/。在不严重降低高频性能的情况下，可以优化外部基极并获得更高的击穿电压。这一点通过模拟双极晶体管的水平电流电学特性得到了证明。

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Lateral bipolar transistor's extrinsic base design for better f/sub T/ vs BV/sub CEO/ solution

In modern fast bipolar transistor design, high frequency performance and current operating level are traded off with breakdown voltages. Charge sharing between extrinsic and intrinsic base acceptors reduces the maximum electric field in the intrinsic transistor and improves BV/sub CEO/. Extrinsic base can be optimized and higher breakdown voltage can be obtained without severely degrading high frequency performance. This was shown by the simulation of the horizontal current bipolar transistor electrical characteristics.

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Proceedings of the 12th IEEE Mediterranean Electrotechnical Conference (IEEE Cat. No.04CH37521)

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