10nm栅极全硅纳米线MOSFET器件的工艺变化效应、金属栅功函数波动和随机掺杂波动

2015 IEEE International Electron Devices Meeting (IEDM) Pub Date : 2015-12-01 DOI:10.1109/IEDM.2015.7409827

Yiming Li, Han-Tung Chang, C. Lai, Pei-Jung Chao, Chieh-Yang Chen

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引用次数: 50

摘要

本文利用全量子力学验证和实验校准的器件模拟，研究了10nm高k /金属栅极硅纳米线MOSFET器件的工艺变化效应(PVE)、功函数波动(WKF)和随机掺杂波动(RDF)。小宽高比装置具有较强的抗RDF能力，但受PVE和WKF的影响较大。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Process variation effect, metal-gate work-function fluctuation and random dopant fluctuation of 10-nm gate-all-around silicon nanowire MOSFET devices

In this work, process variation effect (PVE), work function fluctuation (WKF), and random dopant fluctuation (RDF) on 10-nm high-K/metal gate gate-all-around silicon nanowire MOSFET devices using full-quantum-mechanically validated and experimentally calibrated device simulation are studied. The small aspect ratio device has greater immunity of RDF, while suffers from PVE and WKF.

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2015 IEEE International Electron Devices Meeting (IEDM)

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