半导体岛的纳米接触电子性质研究

11th International Conference 'Microwave and Telecommunication Technology'. Conference Proceedings (IEEE Cat. No.01EX487) Pub Date : 2001-09-10 DOI:10.1109/CRMICO.2001.961611

N.V. Vostokov, V.F. Dryakhlushin, A. Klimov, A. Novikov, O. Khrykin, V. Shashkin

{"title":"半导体岛的纳米接触电子性质研究","authors":"N.V. Vostokov, V.F. Dryakhlushin, A. Klimov, A. Novikov, O. Khrykin, V. Shashkin","doi":"10.1109/CRMICO.2001.961611","DOIUrl":null,"url":null,"abstract":"Distribution of charge in semiconductor islands of InAs on GaAs surface and Ge/sub x/Si/sub 1-x/ on Si surface are investigated by atomic-force microscopy method with using conductor probes. Carriers of charge are concentrated on the islands perimeter that are shown in rough current peaks in this regions. Reason of this effect are indicated. Nanodimensional contact with /spl sim/10/sup -2/ mkm/sup 2/ area to single islands are fabricated, its current-voltage characteristics are investigated.","PeriodicalId":197471,"journal":{"name":"11th International Conference 'Microwave and Telecommunication Technology'. Conference Proceedings (IEEE Cat. No.01EX487)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2001-09-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Investigation of nanocontact electron properties to the semiconductor islands\",\"authors\":\"N.V. Vostokov, V.F. Dryakhlushin, A. Klimov, A. Novikov, O. Khrykin, V. Shashkin\",\"doi\":\"10.1109/CRMICO.2001.961611\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Distribution of charge in semiconductor islands of InAs on GaAs surface and Ge/sub x/Si/sub 1-x/ on Si surface are investigated by atomic-force microscopy method with using conductor probes. Carriers of charge are concentrated on the islands perimeter that are shown in rough current peaks in this regions. Reason of this effect are indicated. Nanodimensional contact with /spl sim/10/sup -2/ mkm/sup 2/ area to single islands are fabricated, its current-voltage characteristics are investigated.\",\"PeriodicalId\":197471,\"journal\":{\"name\":\"11th International Conference 'Microwave and Telecommunication Technology'. Conference Proceedings (IEEE Cat. No.01EX487)\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2001-09-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"11th International Conference 'Microwave and Telecommunication Technology'. Conference Proceedings (IEEE Cat. No.01EX487)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CRMICO.2001.961611\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"11th International Conference 'Microwave and Telecommunication Technology'. Conference Proceedings (IEEE Cat. No.01EX487)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CRMICO.2001.961611","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

利用导体探针，用原子力显微镜研究了砷化镓表面的InAs和Si表面的Ge/sub -x/ Si/sub - 1-x/半导体岛中电荷的分布。电荷的载流子集中在岛屿的周长，在这一区域显示为粗糙的电流峰值。指出了产生这种效应的原因。制备了/spl sim/10/sup -2/ mkm/sup -2/面积与单岛的纳米尺度接触，研究了其电流-电压特性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Investigation of nanocontact electron properties to the semiconductor islands

Distribution of charge in semiconductor islands of InAs on GaAs surface and Ge/sub x/Si/sub 1-x/ on Si surface are investigated by atomic-force microscopy method with using conductor probes. Carriers of charge are concentrated on the islands perimeter that are shown in rough current peaks in this regions. Reason of this effect are indicated. Nanodimensional contact with /spl sim/10/sup -2/ mkm/sup 2/ area to single islands are fabricated, its current-voltage characteristics are investigated.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

11th International Conference 'Microwave and Telecommunication Technology'. Conference Proceedings (IEEE Cat. No.01EX487)

自引率

0.00%

发文量