毫米波段砷化镓谐波发生器的实验特性

1999 9th International Crimean Microwave Conference 'Microwave and Telecommunication Technology'. Conference Proceedings (IEEE Cat. No.99EX363) Pub Date : 1900-01-01 DOI:10.1109/CRMICO.1999.815157

A. V. Dyadchenko, A. Mishnyov, E. Prokhorov, N. I. Beletsky, N. Polyansky

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引用次数: 0

摘要

实验样品具有m-n/sup +/-n-n/sup +/-m模式，并以n- gaas外延薄膜为基础，在给定杂质浓度的低阻抗n/sup +/-衬底上制备。制备了具有给定有效n区长度的甘氏二极管。从二极管在基频瞬态模式下的工作条件中选择n个区域的长度。以这种方式设计和制造的gunn二极管具有无封装设计。

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Experimental characteristics of GaAs-harmonic generators of mm-band

Experimental samples of Gunn-diodes had m-n/sup +/-n-n/sup +/-m pattern and were made on the base of epitaxial films of n-GaAs, on low-impedance n/sup +/-substrate with given impurity concentration. The Gunn-diodes with given lengths of active n-area were made. Length of n-area was selected from an operation condition of the diode in transient-time mode on a base frequency. The Gunn-diodes, designed and manufactured in such a way, had a packageless design.

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1999 9th International Crimean Microwave Conference 'Microwave and Telecommunication Technology'. Conference Proceedings (IEEE Cat. No.99EX363)

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