A. Bauer, F. Langer, S. Hofling, A. Forchel, M. Motyka, G. Sȩk, K. Ryczko, J. Misiewicz
{"title":"带间级联激光器件发射波长在3 ~ 4µm波长范围内的调谐","authors":"A. Bauer, F. Langer, S. Hofling, A. Forchel, M. Motyka, G. Sȩk, K. Ryczko, J. Misiewicz","doi":"10.1109/LEOS.2009.5343395","DOIUrl":null,"url":null,"abstract":"GaSb-based type-II quantum well structures and interband cascade lasers with varying thicknesses of the optically active quantum wells are investigated. Obtained results provide the means for reliable and precise control of the resulting emission wavelength.","PeriodicalId":269220,"journal":{"name":"2009 IEEE LEOS Annual Meeting Conference Proceedings","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2009-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Emission wavelength tuning in interband cascade laser devices in the 3–4 µm wavelength range\",\"authors\":\"A. Bauer, F. Langer, S. Hofling, A. Forchel, M. Motyka, G. Sȩk, K. Ryczko, J. Misiewicz\",\"doi\":\"10.1109/LEOS.2009.5343395\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"GaSb-based type-II quantum well structures and interband cascade lasers with varying thicknesses of the optically active quantum wells are investigated. Obtained results provide the means for reliable and precise control of the resulting emission wavelength.\",\"PeriodicalId\":269220,\"journal\":{\"name\":\"2009 IEEE LEOS Annual Meeting Conference Proceedings\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2009-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2009 IEEE LEOS Annual Meeting Conference Proceedings\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/LEOS.2009.5343395\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 IEEE LEOS Annual Meeting Conference Proceedings","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/LEOS.2009.5343395","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Emission wavelength tuning in interband cascade laser devices in the 3–4 µm wavelength range
GaSb-based type-II quantum well structures and interband cascade lasers with varying thicknesses of the optically active quantum wells are investigated. Obtained results provide the means for reliable and precise control of the resulting emission wavelength.