辐射硬化互补砷化镓(CGaAs/sup TM/)

GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 19th Annual Technical Digest 1997 Pub Date : 1997-10-12 DOI:10.1109/GAAS.1997.628237

M. LaMacchla, J. Abrokwah, B. Bernhardt, B. Crawforth, B. Mathes, T. McGuire, T. Weatherford

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引用次数: 1

摘要

在自向互补GaAs (CGaAs/sup TM/) HIGFET结构中加入低温GaAs (LTG)层降低了SEU灵敏度，同时改善了p沟道HIGFET的短沟道特性。亚阈值泄漏电流，栅极泄漏和输出电导已显著降低。已经在具有LTG层的CGaAs/sup TM/晶圆上演示了170 K晶体管复杂度的设计。

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Radiation hardened complementary GaAs(CGaAs/sup TM/)

The addition of a low temperature GaAs (LTG) layer to the self-aligned complementary GaAs (CGaAs/sup TM/) HIGFET structure has reduced the SEU sensitivity while improving the short channel characteristics of the P-channel HIGFETs. Subthreshold leakage currents, gate leakage, and output conductances have been significantly reduced. Designs of 170 K transistor complexity have been demonstrated on CGaAs/sup TM/ wafers with the LTG layer.

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来源期刊

GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 19th Annual Technical Digest 1997

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