双栅n沟道无结晶体管的输运特性

2016 9th International Conference on Electrical and Computer Engineering (ICECE) Pub Date : 2016-12-01 DOI:10.1109/ICECE.2016.7853938

T. Paul, Q. Khosru

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引用次数: 0

摘要

本文通过数值模拟研究了对称双栅n沟道无结晶体管的静电和输运特性。本文对耦合薛定谔-泊松方程进行了一维自洽分析。得到了通道移动电荷密度，并研究了器件尺寸和偏置电压的变化。采用简化的弹道输运假设来描述漏极电流随器件参数的变化。最后，通过偏置栅极电压提取出跨导。

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Transport characteristics of double gate n-channel junctionless transistor

In this work, Electrostatic and transport characteristics of symmetric double gate n-channel junctionless transistor have been investigated through numerical simulation. A 1-D self consistent analysis of coupled Schrodinger-Poisson equation has been performed. Channel mobile charge density has been obtained and studied for variations in device dimensions and biasing voltages. A simplified ballistic transport assumption has been applied to show the variations of drain current with device parameters. Finally transconductance has been extracted with respect to biasing gate voltage.

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来源期刊

2016 9th International Conference on Electrical and Computer Engineering (ICECE)

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