微控制器电磁发射特性:国际标准模型

S. Ben Dhia, S. Baffreau, S. Calvet, E. Sicard
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引用次数: 5

摘要

随着集成电路技术的规模缩小和向高频的不断转变,集成电路级的电磁兼容性问题最近变得越来越重要。为了预测设备的电磁行为,有必要对集成电路接口开关及其内部活动进行建模。精确的集成电路建模是实现电磁行为仿真的必要条件。本文描述了复杂集成电路内部活动的传导模式寄生发射模型。作者比较了在微控制器上进行的发射测量与使用所提出的模型进行的模拟。该模型考虑了内部活动的影响,更准确地描述了电子设备的电磁辐射。为了验证预测的核心活动方法,作者计划利用芯片采样技术进行一些内部测量。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Characterisation of micro-controller electromagnetic emission: models for an international standard
Following the scale down of integrated circuit technology and the continuous shift toward very high frequencies, the electromagnetic compatibility problems at IC level have recently risen in importance. To predict the electromagnetic behaviour of equipment it is necessary to model IC interface switching and its internal activities. Accurate IC modeling is necessary to realise electromagnetic behaviour simulation. This document describes a conducted mode parasitic emission model for complex IC internal activities. The authors compare conducted emission measurements on a micro-controller with simulations using the proposed model. This model describes more accurately the electromagnetic emissions of electronic equipment by taking into account the influence of internal activities. In order to validate the predicted core activity methodologies, the authors plan to conduct some internal measurements thanks to an on chip sampling technique.
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