量子信息处理的SOI技术

S. D. Franceschi, L. Hutin, R. Maurand, L. Bourdet, H. Bohuslavskyi, A. Corna, D. Kotekar-Patil, S. Barraud, X. Jehl, Y. Niquet, M. Sanquer, M. Vinet
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引用次数: 29

摘要

我们介绍了基于完全耗尽绝缘体上硅(FDSOI)技术实现可扩展量子处理器的最新进展。特别是,我们讨论了一种方法,其中量子信息的基本比特-所谓的量子位-在p型器件的门限制孔的自旋自由度中进行编码。我们展示了如何通过微波激发作用于相应的限制栅来有效地操纵空穴自旋。空穴自旋态可以通过泡利封锁机制读出并重新初始化。所研究的器件来源于硅纳米线场效应晶体管。我们讨论了它们的可扩展性前景,更广泛地说,FDSOI技术的潜在优势。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
SOI technology for quantum information processing
We present recent progress towards the implementation of a scalable quantum processor based on fully-depleted silicon-on-insulator (FDSOI) technology. In particular, we discuss an approach where the elementary bits of quantum information — so-called qubits — are encoded in the spin degree of freedom of gate-confined holes in p-type devices. We show how a hole-spin can be efficiently manipulated by means of a microwave excitation applied to the corresponding confining gate. The hole spin state can be read out and reinitialized through a Pauli blockade mechanism. The studied devices are derived from silicon nanowire field-effect transistors. We discuss their prospects for scalability and, more broadly, the potential advantages of FDSOI technology.
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