基于130 nm SiGe BiCMOS技术的w波段压控振荡器设计

ITM Web of Conferences Pub Date : 1900-01-01 DOI:10.1051/itmconf/20193001006

A. Kozhemyakin, Ivan Kravchenko

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引用次数: 0

摘要

介绍了一种应用于汽车雷达的0.13 μm SiGe BiCMOS技术w波段基频压控振荡器的设计流程和仿真结果。振荡器提供76.8 GHz至81.2 GHz的基本振荡范围。仿真结果表明，在1 MHz偏置时相位噪声为-89.3 dBc/Hz，输出功率为-5.6 dBm, 3.3 V源时功耗为39 mW。

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W-band voltage-controlled oscillator design in 130 nm SiGe BiCMOS technology

The paper presents design flow and simulation results of the W-band fundamental voltage-controlled oscillator in 0.13 μm SiGe BiCMOS technology for an automotive radar application. Oscillator provides fundamental oscillation range of 76.8 GHz to 81.2 GHz. According to simulation results phase noise is –89.3 dBc/Hz at 1 MHz offset, output power is –5.6 dBm and power consumption is 39 mW from 3.3 V source.

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ITM Web of Conferences

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