{"title":"质子轰击砷化镓光导探测毫米波","authors":"C. S. Wong, G.M. Dai, H. Tsang","doi":"10.1109/HKEDM.1999.836397","DOIUrl":null,"url":null,"abstract":"We show that ion-damaged GaAs may be used to detect millimetre electromagnetic waves in photoconductive sampling gates. The semi-insulating GaAs material which was implanted with a dose of 10/sup 14/ cm/sup -2/ protons at an energy of 200 keV gave a signal to noise improvement of about 11.4 dB when compared with as-grown semi-insulating GaAs. The improvement is in spite of reduced carrier mobility in the ion-implanted material and is due to the shorter carrier lifetime and formation of Ohmic contacts with the ion-damaged semi-insulating GaAs.","PeriodicalId":342844,"journal":{"name":"Proceedings 1999 IEEE Hong Kong Electron Devices Meeting (Cat. No.99TH8458)","volume":"72 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1999-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Photoconductive detection of millimetre waves using proton bombarded GaAs\",\"authors\":\"C. S. Wong, G.M. Dai, H. Tsang\",\"doi\":\"10.1109/HKEDM.1999.836397\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We show that ion-damaged GaAs may be used to detect millimetre electromagnetic waves in photoconductive sampling gates. The semi-insulating GaAs material which was implanted with a dose of 10/sup 14/ cm/sup -2/ protons at an energy of 200 keV gave a signal to noise improvement of about 11.4 dB when compared with as-grown semi-insulating GaAs. The improvement is in spite of reduced carrier mobility in the ion-implanted material and is due to the shorter carrier lifetime and formation of Ohmic contacts with the ion-damaged semi-insulating GaAs.\",\"PeriodicalId\":342844,\"journal\":{\"name\":\"Proceedings 1999 IEEE Hong Kong Electron Devices Meeting (Cat. No.99TH8458)\",\"volume\":\"72 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1999-06-26\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings 1999 IEEE Hong Kong Electron Devices Meeting (Cat. No.99TH8458)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/HKEDM.1999.836397\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings 1999 IEEE Hong Kong Electron Devices Meeting (Cat. No.99TH8458)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/HKEDM.1999.836397","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Photoconductive detection of millimetre waves using proton bombarded GaAs
We show that ion-damaged GaAs may be used to detect millimetre electromagnetic waves in photoconductive sampling gates. The semi-insulating GaAs material which was implanted with a dose of 10/sup 14/ cm/sup -2/ protons at an energy of 200 keV gave a signal to noise improvement of about 11.4 dB when compared with as-grown semi-insulating GaAs. The improvement is in spite of reduced carrier mobility in the ion-implanted material and is due to the shorter carrier lifetime and formation of Ohmic contacts with the ion-damaged semi-insulating GaAs.
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