深亚微米nmosfet中射频噪声与栅极氧化物击穿位置的关系

R. Zeng, Hong Wang
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引用次数: 1

摘要

研究了深亚微米mosfet中栅极氧化物击穿位置与噪声特性的关系。对不同位置氧化击穿器件在2 ~ 18 GHz频率范围内的射频噪声进行了表征和比较。结果表明:栅极氧化物击穿后噪声参数的退化不仅与击穿硬度有关,还与氧化物击穿路径的位置有关。对于相似的击穿硬度,形成更靠近源侧的击穿路径可能导致更大的器件射频噪声性能下降。研究了mosfet中氧化击穿引起的射频噪声的物理来源。该研究为在低噪声电路中使用mosfet提供了有用的信息。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Relation between RF noise and gate oxide breakdown location in deep submicron NMOSFETs
The relation between the location of gate oxide breakdown in deep submicron MOSFETs and noise characteristics has been studied. RF noise in the frequency range of 2 to 18 GHz of the devices with oxide breakdown at different locations are characterized and compared. The results show that degradation of noise parameter subject to gate oxide breakdown is not only related to breakdown hardness but also the location of the oxide breakdown path. For similar breakdown hardness, formation of the breakdown path closer to source side may result in a larger degradation of device RF noise performance. The physical origin behind oxide breakdown induced RF noise in MOSFETs is investigated. The study provides useful information for the use of MOSFETs for low noise circuits.
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