用于5-6 GHz无线微系统的集成芯片级有源天线

Proceedings RAWCON 2002. 2002 IEEE Radio and Wireless Conference (Cat. No.02EX573) Pub Date : 2002-11-07 DOI:10.1109/RAWCON.2002.1030139

Jun Zhao, S. Raman

{"title":"用于5-6 GHz无线微系统的集成芯片级有源天线","authors":"Jun Zhao, S. Raman","doi":"10.1109/RAWCON.2002.1030139","DOIUrl":null,"url":null,"abstract":"An integrated GaAs \"chip-scale\" microstrip patch antenna with matching power amplifier has been designed. The size of the antenna is /spl sim/4.2 mm /spl times/ 4.2 mm, which is /spl sim/1/13 of /spl lambda//sub 0/ at 5-6 GHz. A class A tuned MESFET power amplifier (PA) has been designed with its output matched to the antenna feed point. The antenna is fabricated on the backside of the chip through backside patterning, the PA feeds the antenna through a backside via. The structure is mounted such that the antenna faces up, and is compatible with flip-chip technology. The measurement of a passive (no PA) antenna indicates a gain of -12.7 dB on boresight at 5.64 GHz, consistent with the antenna size reduction. The measurement of the active antenna shows a gain of -4.3 dB on boresight at 5.80 GHz. The active circuitry (PA) contributes /spl sim/8.4 dB gain in the active antenna.","PeriodicalId":132092,"journal":{"name":"Proceedings RAWCON 2002. 2002 IEEE Radio and Wireless Conference (Cat. No.02EX573)","volume":"50 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"12","resultStr":"{\"title\":\"An integrated chip-scale active antenna for 5-6 GHz wireless microsystems\",\"authors\":\"Jun Zhao, S. Raman\",\"doi\":\"10.1109/RAWCON.2002.1030139\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"An integrated GaAs \\\"chip-scale\\\" microstrip patch antenna with matching power amplifier has been designed. The size of the antenna is /spl sim/4.2 mm /spl times/ 4.2 mm, which is /spl sim/1/13 of /spl lambda//sub 0/ at 5-6 GHz. A class A tuned MESFET power amplifier (PA) has been designed with its output matched to the antenna feed point. The antenna is fabricated on the backside of the chip through backside patterning, the PA feeds the antenna through a backside via. The structure is mounted such that the antenna faces up, and is compatible with flip-chip technology. The measurement of a passive (no PA) antenna indicates a gain of -12.7 dB on boresight at 5.64 GHz, consistent with the antenna size reduction. The measurement of the active antenna shows a gain of -4.3 dB on boresight at 5.80 GHz. The active circuitry (PA) contributes /spl sim/8.4 dB gain in the active antenna.\",\"PeriodicalId\":132092,\"journal\":{\"name\":\"Proceedings RAWCON 2002. 2002 IEEE Radio and Wireless Conference (Cat. No.02EX573)\",\"volume\":\"50 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2002-11-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"12\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings RAWCON 2002. 2002 IEEE Radio and Wireless Conference (Cat. No.02EX573)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/RAWCON.2002.1030139\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings RAWCON 2002. 2002 IEEE Radio and Wireless Conference (Cat. No.02EX573)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RAWCON.2002.1030139","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 12

摘要

设计了一种带匹配功率放大器的集成砷化镓微带贴片天线。天线的尺寸为/spl sim/4.2 mm /spl times/ 4.2 mm，即在5-6 GHz时为/spl sim/ /spl lambda//sub 0/的1/13。设计了一种输出与天线馈电点匹配的A类调谐MESFET功率放大器(PA)。天线通过背面图案化制作在芯片的背面，PA通过背面通孔馈送天线。该结构的安装使得天线面朝上，并且与倒装芯片技术兼容。无源(无PA)天线的测量结果表明，5.64 GHz时的轴视增益为-12.7 dB，与天线尺寸减小一致。有源天线的测量显示，在5.80 GHz时，轴向增益为-4.3 dB。有源电路(PA)在有源天线中贡献/spl sim/8.4 dB增益。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

An integrated chip-scale active antenna for 5-6 GHz wireless microsystems

An integrated GaAs "chip-scale" microstrip patch antenna with matching power amplifier has been designed. The size of the antenna is /spl sim/4.2 mm /spl times/ 4.2 mm, which is /spl sim/1/13 of /spl lambda//sub 0/ at 5-6 GHz. A class A tuned MESFET power amplifier (PA) has been designed with its output matched to the antenna feed point. The antenna is fabricated on the backside of the chip through backside patterning, the PA feeds the antenna through a backside via. The structure is mounted such that the antenna faces up, and is compatible with flip-chip technology. The measurement of a passive (no PA) antenna indicates a gain of -12.7 dB on boresight at 5.64 GHz, consistent with the antenna size reduction. The measurement of the active antenna shows a gain of -4.3 dB on boresight at 5.80 GHz. The active circuitry (PA) contributes /spl sim/8.4 dB gain in the active antenna.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

Proceedings RAWCON 2002. 2002 IEEE Radio and Wireless Conference (Cat. No.02EX573)

自引率

0.00%

发文量