用于表面微加工中波和长波红外反射器的Ge/BaF2薄膜

G. S. Gill, D. Tripathi, A. Keating, G. Putrino, K. Silva, M. Martyniuk, L. Faraone
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引用次数: 2

摘要

摘要高性能分布式Bragg反射器(dbr)是实现高精细度mems法布里-普氏干涉仪(fpi)的关键元件。合适的机械参数和组成光学材料的折射率之间的高对比度是主要要求。本文研究了锗(Ge)和氟化钡(BaF2)光学薄膜在中波红外(MWIR)和长波红外(LWIR)滤光中的应用。薄膜沉积和制造工艺被优化,以实现机械和光学性能,提供具有均匀厚度和最大反射率的扁平悬浮结构。制备的Ge-BaF2-Ge 3层固体材料DBRs符合预测的模拟性能,尽管在波长超过10 μm时观察到性能下降,这与BaF2材料的光吸收有关。采用空气而非BaF2作为低折射率层的Ge-Air-Ge三层气隙DBR,实现了在横向DBR尺寸为几百微米的情况下,在10 ~ 20 nm的水平上呈现层平面。测量到的DBR反射率在MWIR波段的整个波长范围内都大于90%,在LWIR波段的11 μm波段内也大于90%。基于实测DBR反射率的仿真表明,mems fpi在整个MWIR波段的峰值透射率为> 90%,在LWIR波段的峰值透射率高达10 μm,对应的光谱通带在MWIR中为> 50 nm,在LWIR中为<80 nm。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Ge/BaF2 thin-films for surface micromachined mid-wave and long-wave infrared reflectors
Abstract. High performance distributed Bragg reflectors (DBRs) are key elements to achieving high finesse MEMS-based Fabry–Pérot interferometers (FPIs). Suitable mechanical parameters combined with high contrast between the refractive indices of the constituent optical materials are the main requirements. In this paper, Germanium (Ge) and barium fluoride (BaF2) optical thin-films have been investigated for mid-wave infrared (MWIR) and long-wave infrared (LWIR) filter applications. Thin-film deposition and fabrication processes were optimised to achieve mechanical and optical properties that provide flat suspended structures with uniform thickness and maximum reflectivity. Ge-BaF2-Ge 3-layer solid-material DBRs have been fabricated that matched the predicted simulation performance, although a degradation in performance was observed for wavelengths beyond 10  μm that is associated with optical absorption in the BaF2 material. Ge-Air-Ge 3-layer air-gap DBRs, in which air rather than BaF2 served as the low refractive index layer, were realized to exhibit layer flatness at the level of 10 to 20 nm across lateral DBR dimensions of several hundred micrometers. Measured DBR reflectance was found to be ≳90  %   over the entire wavelength range of the MWIR band and for the LWIR band up to a wavelength of 11  μm. Simulations based on the measured DBR reflectance indicates that MEMS-based FPIs are able to achieve a peak transmission of ≳90  %   over the entire MWIR band and up to 10  μm in the LWIR band, with a corresponding spectral passband of ≲50  nm in the MWIR and <80  nm in the LWIR.
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