氮化硼的太赫兹特性与负介电区

2010 2nd IEEE International Workshop Thz Radiation: Basic Research and Applications Pub Date : 2010-11-04 DOI:10.1109/TERA.2010.5619938

S. Felinskyi, P. Korotkov, G. Felinskyi

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引用次数: 1

摘要

我们的报告将分析三种氮化硼晶体修饰中太赫兹异常色散和材料物理性质导致形成负介电常数(DP)区域的原因，该区域是围绕极性频率振荡产生的。我们的分析基于存在负DP波段的简单定量判据。研究了氮化硼不同晶体修饰下的7种振动，结果表明本准则适用于含复杂极性声子的晶体分析。

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Terahertz properties and the negative dielectric regions in boron nitride

Terahertz anomalous dispersion and material physical properties leads to form the region with negative dielectric permittivity (DP) that is created around the polar frequency oscillations in three crystalline modifications of boron nitride will be analyzed in our report. Our analysis based on the simple quantitative criterion of existence the negative DP bands. Seven vibrations in different crystalline modifications of boron nitride have been studied and it is shown the applicability of our criterion to crystals analysis with a complex set of polar phonons.

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2010 2nd IEEE International Workshop Thz Radiation: Basic Research and Applications

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