红外快速退火技术及其在超大规模集成电路中的应用

1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings Pub Date : 1995-11-06 DOI:10.1109/TENCON.1995.496395

Hui Lin, Rong Liu, Bingsen Chen, Hongfa Luan

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引用次数: 0

摘要

介绍了超大规模集成电路红外快速退火的工艺和设备。用于快速退火的设备是用石英外壳中的射频(RF)感应石墨加热器作为红外热源制成的。利用该技术和设备，讨论了czsi单晶中浅结的制备、硅化物的形成、BPSG回流的影响以及微缺陷和热供体的湮灭。

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Technology of infrared rapid thermal annealing and its application in VLSI

The technology and equipment of the infrared rapid thermal annealing for VLSI is reported. The equipment used for rapid thermal annealing has been made with an radio frequency (RF)-induced graphite heater in a quartz housing as an infrared heating source. By using this technology and equipment the fabrication of shallow junction, the formation of silicide, the effect of BPSG reflow and annihilating the micro defects and thermal donor in CZ Si single crystal are discussed.

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来源期刊

1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings

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