1.5-/spl μ m激光外延Gd/sub 3/(GaSc)/sub 5/O/sub 12/:Er和CN:Er薄膜

Proceedings of LFNM'2001. 3rd International Workshop on Laser and Fiber-Optical Networks Modeling (Cat. No.01EX463) Pub Date : 2001-05-22 DOI:10.1109/LFNM.2001.930222

A. Prudnikov, L. Tsymbal, V. Varyukhin, A. Linnik, R.V. Shalaev

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引用次数: 0

摘要

只提供摘要形式。采用液相外延法在纯Gd/sub 3/Ga/sub 5/O/sub 12/衬底上生长Gd/sub 3/(Ga/sub 2/Sc)/sub 5/O/sub 12/:Er薄膜。不同Gd/sup +/离子数量的膜被Er/sup +/离子取代。Sc/sup 3+/离子用于补偿薄膜的基本晶胞的尺寸，使基本晶胞的尺寸与衬底的尺寸一致。电磁辐射对外延结构生长过程的影响。采用大功率氙灯、脉冲激光和连续激光对CN:Er薄膜进行了生长实验。讨论了结晶表面的过程模型，指出了在分析光刺激外延时考虑缺陷动力学的必要性。研究了掺入Er/sup 3+/离子的Gd/sub 3/(GaSc)/sub 5/O/sub 12/和CN薄膜的光谱发光特性。

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Epitaxial Gd/sub 3/(GaSc)/sub 5/O/sub 12/:Er and CN:Er films in active medium for 1.5-/spl mu/m laser

Summary form only given. The studied Gd/sub 3/(Ga/sub 2/Sc)/sub 5/O/sub 12/:Er films were grown using the method of liquid-phase epitaxy on pure Gd/sub 3/Ga/sub 5/O/sub 12/ substrates. The employed films, which differed in the number of Gd/sup 3+/ ions, are replaced by Er/sup 3+/ ions. The Sc/sup 3+/ ions were used to compensate the size of the elementary crystal cell of the film and to bring the size of the elementary cell in correspondence with the size of the substrate. An influence in studied of electromagnetic radiation on epitaxial structure growing processes. High power xenon lamp, pulse and continuous lasers were used in experiments on CN:Er films growing. The model of processes on the crystallization surface is considered and the necessity to take defects kinetics into account when analyzing photostimulated epitaxy is shown. Spectral-luminescent properties of Gd/sub 3/(GaSc)/sub 5/O/sub 12/ and CN films doped with Er/sup 3+/ ions have been studied.

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Proceedings of LFNM'2001. 3rd International Workshop on Laser and Fiber-Optical Networks Modeling (Cat. No.01EX463)

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