在0.1 /spl mu/m InAlAs/InGaAs HEMT器件上可靠的ECR钝化技术

Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM) Pub Date : 1994-03-27 DOI:10.1109/ICIPRM.1994.328310

K. C. Hwang, A. Reisinger, K. Duh, M. Kao, P. Chao, P. Ho, A. Swanson

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引用次数: 9

摘要

利用电子回旋共振(ECR)微波等离子体化学气相沉积(CVD)技术，在0.1/spl倍/50 /spl mu/m的InAlAs/InGaAs/InP高电子迁移率晶体管(HEMT)上建立了可靠的氮化钝化技术。利用傅里叶变换红外光谱(FTIR)对氮化膜进行了表征。薄膜中的应力由晶圆曲率测量。ECR SiN钝化对0.1 /spl mu/m inp - hemt在60 GHz时的噪声和增益性能几乎没有影响。直流加速寿命试验分别在225/spl℃和245/spl℃的基准温度下进行。基于g/sub /=-20%失效准则的中位失效时间(MTF)得到的Arrhenius图在150/spl℃的基底温度下活化能为1.6 eV，预计寿命为10/sup / 6/小时，这是迄今为止钝化InP-HEMTs的最佳中位寿命。

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A reliable ECR passivation technique on the 0.1 /spl mu/m InAlAs/InGaAs HEMT device

We have developed a reliable nitride passivation technique on the 0.1/spl times/50 /spl mu/m InAlAs/InGaAs/InP high electron mobility transistor (HEMT) using electron cyclotron resonance (ECR) microwave plasma chemical vapor deposition (CVD). The nitride film was characterized by Fourier transform infrared spectroscopy (FTIR). The stress in the film was measured from wafer curvature. The ECR SiN passivation has almost no effect on the noise and gain performance of 0.1 /spl mu/m InP-HEMTs at 60 GHz. DC accelerated life tests were performed at base temperatures of 225/spl deg/C and 245/spl deg/C. The Median-Time-To-Failure (MTF) based upon a failure criterion of g/sub m/=-20% leads to an Arrhenius plot with an activation energy of 1.6 eV and a projected life of 10/sup 6/ hours at 150/spl deg/C base plate temperature, which is the best median life time ever reported for passivated InP-HEMTs.<>

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Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM)

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