Performance estimation of N-channel ZnO based thin film transistor using simulation

High optical transparency and low cost with excellent switching performance drew the attention of researchers in using ZnO as a potential material for TFT device design. The electrical parameter extraction of ZnO channel thin film transistor using simulation is carried out in Sentaurus TCAD tool. The scope of the research is to analyze the performance of the device on the basis of parameters extracted from its transfer characteristic. The device has shown high field effect mobility of order ~1 × 10-4, and significant on current -6.22 × 10-6 A, off current ~ 1.26 × 10-10 A with improved on-off ratio ~105, which makes the device reliable for the next generation of flexible electronics and display devices.