PWF:减少基于闪存的存储设备的写响应时间

Jaeyoung Shin, Sungmin Park, D. Kim, Sooyong Kang
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引用次数: 0

摘要

现代基于闪存的存储设备使用写缓冲区不仅是为了减少实际写入闪存的数据量,而且是为了快速响应每个写请求。只要缓冲区管理器不选择缓冲页作为替换对象,以便为新到达的写请求获取空闲空间,缓冲页就会尽可能晚地刷新到闪存中,并预期将来可能出现写命中。虽然这种延迟刷新可以最大化缓冲区命中率,但就写响应时间而言,它可能成为快速写响应的障碍。只有选定的受害页面被安全写入闪存,并且请求的数据被写入写缓冲区时,SSD才能响应写请求。在本文中,我们提出了主动写入缓冲区刷新(PWF)方案,该方案在I/O请求间隔期间主动刷新部分缓冲数据到闪存。我们的仿真研究表明,该方案有效地减少了写入响应时间,开销可以忽略不计。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
PWF: Reducing write response time in flash memory-based storage devices
Modern flash memory-based storage devices use write buffer not only to reduce the amount of data actually written to the flash memory but also to quickly respond to each write request. A buffered page is flushed to the flash memory as late as possible, expecting possible future write hits, so long as the buffer manager does not select it as a victim for replacement to acquire free space for newly arrived write request. While this delayed-flushing can maximize the buffer hit ratio, in terms of the write response time, it can be a hurdle for fast write response. SSD can respond to a write request only when selected victim pages are safely written to the flash memory and the requested data are written to the write buffer. In this paper, we propose the Proactive Write buffer Flushing (PWF) scheme that proactively flushes a portion of buffered data to the flash memory during the I/O requests intervals. Our simulation study showed that the proposed scheme effectively reduces the write response time with negligible overhead.
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