2.14GHz的0.13µm电感退化级联CMOS LNA

M. Muhamad, N. Soin, H. Ramiah, N. Noh, C. W. Keat
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引用次数: 2

摘要

提出了一种用于WCDMA的130纳米CMOS低噪声放大器(LNA)。电路采用电感退化级联码拓扑结构。提出了一种使用功率约束噪声优化(PCNO)方法的详细方法,该方法可导致LNA的最佳宽度。采用固定功率的理论噪声系数优化作为设计优化的指导。这种电感退化级联拓扑结构具有良好的噪声性能,噪声系数为1.32dB,同时在1.2V电压下提供18.24 dB的正向增益S21。输入反射系数S11为−19 dB。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A 0.13µm inductively degenerated cascode CMOS LNA at 2.14GHz
A 130-nm CMOS low-noise amplifier (LNA) for WCDMA applications is presented. The circuit adopts an inductively degenerated cascode topology. A detailed methodology using power constraint noise optimization (PCNO) method that leads to an optimum width of the LNA is presented. A theoretical noise figure optimization using fixed power was used as a design optimization guide. This inductively degenerated cascade topology show good noise performance which it achieve a noise figure of 1.32dB while provides a forward gain, S21 of 18.24 dB from a 1.2V voltage supply. The input reflection coefficient, S11 is −19 dB.
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