采用单片3D-IC技术实现功能模块的高密度集成

Shreepad Panth, K. Samadi, Yang Du, S. Lim
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引用次数: 53

摘要

三维集成电路(3d - ic)已成为一种有前途的解决方案,以继续器件缩放。它们可以使用透硅通孔(tsv)来实现,或者使用单片层间通孔(miv)来实现单片集成,这是一种新兴的替代方案,可以提供更高的通孔密度。在本文中,我们提供了一个框架,用于使用miv将现有的2D IP块规划为3d - ic。我们采用地板规划解决方案,通过放置和路线,并报告布局后的面积、无线长度、时间和功耗指标。结果表明,仅在大规模电路中,基于tsv的3D设计的无线长度就比2D设计高出14%。然而,基于miv的3D设计在广泛的基准电路中提供了33%的平均带宽改进。我们还表明,尽管基于TSV的3D不能提高性能和功耗,除非降低TSV电容,但基于miv的3D可以显著降低最长路径延迟达33%,块间净功耗达35%。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
High-density integration of functional modules using monolithic 3D-IC technology
Three dimensional integrated circuits (3D-ICs) have emerged as a promising solution to continue device scaling. They can be realized using Through Silicon Vias (TSVs), or monolithic integration using Monolithic Inter-tier vias (MIVs), an emerging alternative that provides much higher via densities. In this paper, we provide a framework for floorplanning existing 2D IP blocks into 3D-ICs using MIVs. We take the floorplanning solution all the way through place-and-route and report post-layout metrics for area, wirelength, timing, and power consumption. Results show that the wirelength of TSV-based 3D designs outperform 2D designs by upto 14% in large-scale circuits only. MIV-based 3D designs, however, offer an average wirelength improvement of 33% for a wide range of benchmark circuits. We also show that while TSV-based 3D cannot improve the performance and power unless the TSV capacitance is reduced, MIV-based 3D offers significant reduction of upto 33% in the longest path delay and 35% in the inter-block net power.
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