{"title":"13 GHz FET负阻0.5 W放大器","authors":"S. Nicotra","doi":"10.1109/EUMA.1979.332718","DOIUrl":null,"url":null,"abstract":"A two-stage 13 GHz negative resistance amplifier utilizing commercially available GaAs FETs in a sealed container has been realized. The amplifier performs a 0.5 W output power, a 16 dB linear gain, an AM to PM conversion cf less than 3°/dB in the instantaneous bandwidth of 500 MHz. The estimated MTTF exceeds 106 hours. Its application in a 34 Mbit/s 4-PSK 13 GHz radio link is being described.","PeriodicalId":128931,"journal":{"name":"1979 9th European Microwave Conference","volume":"1588 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1979-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"13 GHz FET Negative Resistance 0.5 W Amplifier\",\"authors\":\"S. Nicotra\",\"doi\":\"10.1109/EUMA.1979.332718\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A two-stage 13 GHz negative resistance amplifier utilizing commercially available GaAs FETs in a sealed container has been realized. The amplifier performs a 0.5 W output power, a 16 dB linear gain, an AM to PM conversion cf less than 3°/dB in the instantaneous bandwidth of 500 MHz. The estimated MTTF exceeds 106 hours. Its application in a 34 Mbit/s 4-PSK 13 GHz radio link is being described.\",\"PeriodicalId\":128931,\"journal\":{\"name\":\"1979 9th European Microwave Conference\",\"volume\":\"1588 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1979-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1979 9th European Microwave Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EUMA.1979.332718\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1979 9th European Microwave Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EUMA.1979.332718","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A two-stage 13 GHz negative resistance amplifier utilizing commercially available GaAs FETs in a sealed container has been realized. The amplifier performs a 0.5 W output power, a 16 dB linear gain, an AM to PM conversion cf less than 3°/dB in the instantaneous bandwidth of 500 MHz. The estimated MTTF exceeds 106 hours. Its application in a 34 Mbit/s 4-PSK 13 GHz radio link is being described.
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