一种用于绝缘栅双极晶体管的先进栅极驱动器,可消除逆变器输出中死区时间引起的畸变

A. Datta, A. Guha, G. Narayanan
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引用次数: 3

摘要

在电压源逆变器(VSI)分支的上、下开关的门控信号之间引入死区时间,以防止由于igbt关断时间有限而导致的穿通故障。当输入器件为IGBT时,死区时间会导致延迟,从而导致逆变器输出电压中的错误电压脉冲。本文介绍了一种先进的栅极驱动器的设计、制造和测试,该驱动器消除了死区时间和由此产生的输出失真。在这里,门控脉冲的产生使得传入的IGBT跃迁不被延迟,并且也防止了穿透。通过在斩波器、半桥和全桥逆变器等不同拓扑结构以及不同负载条件下的广泛测试,验证了驱动卡的各种逻辑单元和驱动器的容错性。实验结果表明,由于消除了死区时间,该电路改善了负载电流波形质量。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
An advanced gate driver for insulated gate bipolar transistors to eliminate dead-time induced distortions in inverter output
Dead-time is introduced between the gating signals to the top and bottom switches in a voltage source inverter (VSI) leg, to prevent shoot through fault due to the finite turn-off times of IGBTs. The dead-time results in a delay when the incoming device is an IGBT, resulting in error voltage pulses in the inverter output voltage. This paper presents the design, fabrication and testing of an advanced gate driver, which eliminates dead-time and consequent output distortion. Here, the gating pulses are generated such that the incoming IGBT transition is not delayed and shoot-through is also prevented. The various logic units of the driver card and fault tolerance of the driver are verified through extensive tests on different topologies such as chopper, half-bridge and full-bridge inverter, and also at different conditions of load. Experimental results demonstrate the improvement in the load current waveform quality with the proposed circuit, on account of elimination of dead-time.
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