基于溶液处理的铟镓锡氧化物薄膜晶体管性能更好

2019 26th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD) Pub Date : 2019-07-02 DOI:10.23919/AM-FPD.2019.8830600

Yafang Wang, Zhaogui Wang, Chuan Liu

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引用次数: 0

摘要

采用溶液法制备了铟镓锡氧化物(In-Ga-Sn-O)薄膜，用于TFT活性层。自旋涂覆的IGTO薄膜在290nm至800nm的光谱范围内具有超过90%的透明度。通过调整In和Sn元素的比例，可以将瓶栅和顶接触IGTO TFT的饱和场效应迁移率从10 cm2/Vs提高到13 cm2/Vs。当应力时间为3600s时，正栅极偏压(PGBS)和负栅极偏压(NGBS)下的ΔVTH分别为0.8V和-1.8V。在水蒸气中预热的自旋涂覆IGTO薄膜在栅极电压正反扫描中表现得更加稳定，并且获得了比未经过水蒸气预热的IGTO薄膜更高的导通电流。此外，在我们的研究中，短通道器件具有更好的性能。通过比较，基于溶液过程的IGTO TFT比许多IGZO TFT性能更好。该结果可能为基于氧化物的tft、显示器和透明电子产品提供新的选择。

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The Indium-Gallium-Tin-Oxide thin film transistor with better performance based on the solution procession

We newly prepared indium-gallium-tin-oxide (In-Ga-Sn-O) thin film by solution process for TFT active layer. The spin-coated IGTO film exhibits an excellent transparency that is over 90% at the spectral range from 290nm to 800nm. The saturation filed effect mobility of bottle-gate and top-contact IGTO TFT can be increased from 10 cm2/Vs to 13 cm2/Vs by adjusting the elements ratio of In and Sn. The ΔVTH was 0.8V and -1.8V respectively under positive gate bias stressing (PGBS) and negative gate bias stressing (NGBS) with stress time for 3600s. The spin-coated IGTO film pre-heated in water vapor performed more stable in gate voltage forth-back scanning and obtained higher on-current than those not preheated by water vapor. In addition, the short channel device has better performance in our study. By comparison, solution-process based IGTO TFT performs better than many IGZO TFTs. The results may provide a new choice for oxide-based TFTs, displays and transparent electronics.

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来源期刊

2019 26th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)

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