InGaAs/InP mqw在SOI上的选择性再生

2022 IEEE Photonics Conference (IPC) Pub Date : 2022-11-01 DOI:10.1109/IPC53466.2022.9975450

Jie Li, Ying Xue, Zhao Yan, Yu Han, K. Lau

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引用次数: 0

摘要

我们展示了InGaAs/InP多量子阱(mqw)在绝缘体上硅(SOI)晶圆上的选择性再生，用于电信波段发射。mqw的生长是由在单片InP/SOI平台上制作的再生模板指导的。获得了粗糙度为0.381 nm的平坦(001)III-V表面，强光致发光(PL)发射为1.55 $\mu$m，半最大全宽(FWHM)为73 meV的量子点。

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Selective regrowth of InGaAs/InP MQWs on SOI for telecom band emission

We demonstrated selective regrowth of InGaAs/InP multi-quantum wells (MQWs) on silicon-on-insulator (SOI) wafers for telecom band emission. The MQWs growth was guided by regrowth templates fabricated on a monolithic InP/SOI platform. Flat (001) III-V surface with a roughness of 0.381 nm, QWs with strong photoluminescence (PL) emission at 1.55 $\mu$m, and narrow full-width-at-half-maximum (FWHM) of 73 meV were achieved.

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2022 IEEE Photonics Conference (IPC)

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