{"title":"一种用于固态纳米孔超低电流测量的集成膜片钳放大器","authors":"Jungsuk Kim, G. Wang, W. Dunbar, K. Pedrotti","doi":"10.1109/SOCDC.2010.5682879","DOIUrl":null,"url":null,"abstract":"In this paper, an integrated low-noise patch-clamp amplifier for a solid-state nanopore application is proposed which is composed of three stages: 1) a trans-impedance amplifier (TIA), 2) a voltage-gain amplifier (VGA), and 3) a unity-gain buffer. Because the first stage amplifier makes dominant impacts on gain, bandwidth, noise, stability, and area of the patch-clamp amplifier, in this work, we present the design analysis for the TIA and its optimal feedback resistance. The proposed patch-clamp amplifier has a maximum gain of 152.2dBΩ, an input-referred noise of 11.3pARMS within bandwidth of 10 KHz, and occupies an active die-area of 0.0625mm2. This amplifier is under fabrication in a 0.35μm CMOS 4M2P Process.","PeriodicalId":380183,"journal":{"name":"2010 International SoC Design Conference","volume":"94 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"14","resultStr":"{\"title\":\"An integrated patch-clamp amplifier for ultra-low current measurement on solid-state nanopore\",\"authors\":\"Jungsuk Kim, G. Wang, W. Dunbar, K. Pedrotti\",\"doi\":\"10.1109/SOCDC.2010.5682879\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, an integrated low-noise patch-clamp amplifier for a solid-state nanopore application is proposed which is composed of three stages: 1) a trans-impedance amplifier (TIA), 2) a voltage-gain amplifier (VGA), and 3) a unity-gain buffer. Because the first stage amplifier makes dominant impacts on gain, bandwidth, noise, stability, and area of the patch-clamp amplifier, in this work, we present the design analysis for the TIA and its optimal feedback resistance. The proposed patch-clamp amplifier has a maximum gain of 152.2dBΩ, an input-referred noise of 11.3pARMS within bandwidth of 10 KHz, and occupies an active die-area of 0.0625mm2. This amplifier is under fabrication in a 0.35μm CMOS 4M2P Process.\",\"PeriodicalId\":380183,\"journal\":{\"name\":\"2010 International SoC Design Conference\",\"volume\":\"94 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2010-11-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"14\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2010 International SoC Design Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SOCDC.2010.5682879\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 International SoC Design Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SOCDC.2010.5682879","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
An integrated patch-clamp amplifier for ultra-low current measurement on solid-state nanopore
In this paper, an integrated low-noise patch-clamp amplifier for a solid-state nanopore application is proposed which is composed of three stages: 1) a trans-impedance amplifier (TIA), 2) a voltage-gain amplifier (VGA), and 3) a unity-gain buffer. Because the first stage amplifier makes dominant impacts on gain, bandwidth, noise, stability, and area of the patch-clamp amplifier, in this work, we present the design analysis for the TIA and its optimal feedback resistance. The proposed patch-clamp amplifier has a maximum gain of 152.2dBΩ, an input-referred noise of 11.3pARMS within bandwidth of 10 KHz, and occupies an active die-area of 0.0625mm2. This amplifier is under fabrication in a 0.35μm CMOS 4M2P Process.
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