{"title":"硅和硅二极管降压DC-DC变换器的仿真","authors":"Nikita Yu. Burtsev, O. Kozhemyak","doi":"10.1109/SIBCON56144.2022.10003010","DOIUrl":null,"url":null,"abstract":"The article presents the results of simulation of pulse DC-DC step-down converter with different types of diodes. Simulations have shown that the use of a silicon carbide diode instead of convenient silicon diode gives the best performance. It also shown, the parasitic inductances in the circuit significantly increase the power losses when the diode is switched-off and reduce the losses when the transistor is switched-on.","PeriodicalId":265523,"journal":{"name":"2022 International Siberian Conference on Control and Communications (SIBCON)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-11-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Simulation of the Step-Down DC-DC converter with Si-and SiC-diodes\",\"authors\":\"Nikita Yu. Burtsev, O. Kozhemyak\",\"doi\":\"10.1109/SIBCON56144.2022.10003010\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The article presents the results of simulation of pulse DC-DC step-down converter with different types of diodes. Simulations have shown that the use of a silicon carbide diode instead of convenient silicon diode gives the best performance. It also shown, the parasitic inductances in the circuit significantly increase the power losses when the diode is switched-off and reduce the losses when the transistor is switched-on.\",\"PeriodicalId\":265523,\"journal\":{\"name\":\"2022 International Siberian Conference on Control and Communications (SIBCON)\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2022-11-17\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2022 International Siberian Conference on Control and Communications (SIBCON)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SIBCON56144.2022.10003010\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 International Siberian Conference on Control and Communications (SIBCON)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SIBCON56144.2022.10003010","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Simulation of the Step-Down DC-DC converter with Si-and SiC-diodes
The article presents the results of simulation of pulse DC-DC step-down converter with different types of diodes. Simulations have shown that the use of a silicon carbide diode instead of convenient silicon diode gives the best performance. It also shown, the parasitic inductances in the circuit significantly increase the power losses when the diode is switched-off and reduce the losses when the transistor is switched-on.
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