T. Morooka, T. Ishikawa, M. Komura, T. Kato, Y. Koyama, Y. Han, Y. Sugawara, D. Kuwabara, Y. Arayashiki, A. Murayama, K. Nishiyama, K. Sugimae, T. Ogura, H. Takeda, N. Kariya, Y. Goki, S. Konuma, Y. Kamiya, H. Yamashita, H. Shiga, K. Itagaki, R. Tanaka, T. Maeda, N. Ohtani, M. Fujiwara
{"title":"超高密度闪存三维半圆形分栅单元的优化结构/操作设计","authors":"T. Morooka, T. Ishikawa, M. Komura, T. Kato, Y. Koyama, Y. Han, Y. Sugawara, D. Kuwabara, Y. Arayashiki, A. Murayama, K. Nishiyama, K. Sugimae, T. Ogura, H. Takeda, N. Kariya, Y. Goki, S. Konuma, Y. Kamiya, H. Yamashita, H. Shiga, K. Itagaki, R. Tanaka, T. Maeda, N. Ohtani, M. Fujiwara","doi":"10.1109/vlsitechnologyandcir46769.2022.9830513","DOIUrl":null,"url":null,"abstract":"Three-dimensional (3D) semicircular split-gate floating-gate (FG) cells have been successfully developed for both boosting cell density per footprint and expanding the capability of multiple bits per cell. FG structure engineering mitigates program/erase (P/E) window reduction due to the fringing field effect in the split-gate cell. Front-side and back-side cells which share the same channel can be separately read by reducing back-side cell leakage current by means of back-gate bias control. Moreover, FG structure enables tight Vth distribution by suppressing random telegraph noise (RTN) increase due to small cell area. As a result, the distributions of four bits/cell (QLC) and five bits/cell (PLC) have been experimentally demonstrated by the split-gate cell arrays for the first time.","PeriodicalId":332454,"journal":{"name":"2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2022-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Optimal Cell Structure/Operation Design of 3D Semicircular Split-gate Cells for Ultra-high-density Flash Memory\",\"authors\":\"T. Morooka, T. Ishikawa, M. Komura, T. Kato, Y. Koyama, Y. Han, Y. Sugawara, D. Kuwabara, Y. Arayashiki, A. Murayama, K. Nishiyama, K. Sugimae, T. Ogura, H. Takeda, N. Kariya, Y. Goki, S. Konuma, Y. Kamiya, H. Yamashita, H. Shiga, K. Itagaki, R. Tanaka, T. Maeda, N. Ohtani, M. Fujiwara\",\"doi\":\"10.1109/vlsitechnologyandcir46769.2022.9830513\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Three-dimensional (3D) semicircular split-gate floating-gate (FG) cells have been successfully developed for both boosting cell density per footprint and expanding the capability of multiple bits per cell. FG structure engineering mitigates program/erase (P/E) window reduction due to the fringing field effect in the split-gate cell. Front-side and back-side cells which share the same channel can be separately read by reducing back-side cell leakage current by means of back-gate bias control. Moreover, FG structure enables tight Vth distribution by suppressing random telegraph noise (RTN) increase due to small cell area. As a result, the distributions of four bits/cell (QLC) and five bits/cell (PLC) have been experimentally demonstrated by the split-gate cell arrays for the first time.\",\"PeriodicalId\":332454,\"journal\":{\"name\":\"2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2022-06-12\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/vlsitechnologyandcir46769.2022.9830513\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/vlsitechnologyandcir46769.2022.9830513","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Optimal Cell Structure/Operation Design of 3D Semicircular Split-gate Cells for Ultra-high-density Flash Memory
Three-dimensional (3D) semicircular split-gate floating-gate (FG) cells have been successfully developed for both boosting cell density per footprint and expanding the capability of multiple bits per cell. FG structure engineering mitigates program/erase (P/E) window reduction due to the fringing field effect in the split-gate cell. Front-side and back-side cells which share the same channel can be separately read by reducing back-side cell leakage current by means of back-gate bias control. Moreover, FG structure enables tight Vth distribution by suppressing random telegraph noise (RTN) increase due to small cell area. As a result, the distributions of four bits/cell (QLC) and five bits/cell (PLC) have been experimentally demonstrated by the split-gate cell arrays for the first time.