基于坏块重用方案的NAND闪存存储系统寿命增强研究

2014 International Conference on Electronics, Information and Communications (ICEIC) Pub Date : 2014-10-02 DOI:10.1109/ELINFOCOM.2014.6914377

Taeyeong Huh, Farhan Hussain, Sanghyuk Jung, Y. Song

{"title":"基于坏块重用方案的NAND闪存存储系统寿命增强研究","authors":"Taeyeong Huh, Farhan Hussain, Sanghyuk Jung, Y. Song","doi":"10.1109/ELINFOCOM.2014.6914377","DOIUrl":null,"url":null,"abstract":"NAND flash memory has cost competitiveness, since the process technology which can store multi-bit in a cell is developed. Because of this technology, NAND flash memory is widely used for storage system of various electronic devices. Even though the capacity per unit area is consistently increased with the development of process technology, the cell-to-cell interference rises accordingly and it makes the possibility of bad block increase rapidly. In this paper, we analyzed the pattern of bad page by using the platform board, and we propose the lifetime enhancement scheme of flash storage system based on the experimental results.","PeriodicalId":360207,"journal":{"name":"2014 International Conference on Electronics, Information and Communications (ICEIC)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Lifetime enhancement of NAND flash memory-based storage system by bad block reuse scheme\",\"authors\":\"Taeyeong Huh, Farhan Hussain, Sanghyuk Jung, Y. Song\",\"doi\":\"10.1109/ELINFOCOM.2014.6914377\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"NAND flash memory has cost competitiveness, since the process technology which can store multi-bit in a cell is developed. Because of this technology, NAND flash memory is widely used for storage system of various electronic devices. Even though the capacity per unit area is consistently increased with the development of process technology, the cell-to-cell interference rises accordingly and it makes the possibility of bad block increase rapidly. In this paper, we analyzed the pattern of bad page by using the platform board, and we propose the lifetime enhancement scheme of flash storage system based on the experimental results.\",\"PeriodicalId\":360207,\"journal\":{\"name\":\"2014 International Conference on Electronics, Information and Communications (ICEIC)\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-10-02\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2014 International Conference on Electronics, Information and Communications (ICEIC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ELINFOCOM.2014.6914377\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 International Conference on Electronics, Information and Communications (ICEIC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ELINFOCOM.2014.6914377","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

由于在一个单元中存储多比特的工艺技术的发展，NAND闪存具有成本竞争力。由于这种技术，NAND闪存被广泛应用于各种电子设备的存储系统中。虽然随着工艺技术的发展，单位面积容量不断增加，但小区间的干扰也随之增加，这使得坏块的可能性迅速增加。本文利用平台板对坏页模式进行了分析，并根据实验结果提出了闪存系统寿命增强方案。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Lifetime enhancement of NAND flash memory-based storage system by bad block reuse scheme

NAND flash memory has cost competitiveness, since the process technology which can store multi-bit in a cell is developed. Because of this technology, NAND flash memory is widely used for storage system of various electronic devices. Even though the capacity per unit area is consistently increased with the development of process technology, the cell-to-cell interference rises accordingly and it makes the possibility of bad block increase rapidly. In this paper, we analyzed the pattern of bad page by using the platform board, and we propose the lifetime enhancement scheme of flash storage system based on the experimental results.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2014 International Conference on Electronics, Information and Communications (ICEIC)

自引率

0.00%

发文量