Y. Bouvier, A. Konczykowska, A. Ouslimani, F. Jorge, M. Riet, J. Godin
{"title":"一种采用InP DHBT技术的20 gsamples /s跟踪保持放大器","authors":"Y. Bouvier, A. Konczykowska, A. Ouslimani, F. Jorge, M. Riet, J. Godin","doi":"10.1109/EMICC.2007.4412632","DOIUrl":null,"url":null,"abstract":"A fully differential 20 Gsample/s Track and Hold Amplifier with 20 GHz large-input-signal bandwidth is designed and fabricated in 210 GHz-fT-InP-DHBT on a 1.6 x 1.4 mm2 chip. Spectral measurements in track mode give an SNR, a THD, and a SFDR respectively of 65 dB, -38 dB and -38 dB for input frequency up to 9 GHz and input voltage up to 0.5 Vpp. This THD is equivalent to 6 ENOB. Time domain measurements illustrate 20 GHz sampling with 2 and 5 GHz sinusoidal input signals.","PeriodicalId":436391,"journal":{"name":"2007 European Microwave Integrated Circuit Conference","volume":"9 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-12-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"9","resultStr":"{\"title\":\"A 20-GSamples/s Track-Hold Amplifier in InP DHBT technology\",\"authors\":\"Y. Bouvier, A. Konczykowska, A. Ouslimani, F. Jorge, M. Riet, J. Godin\",\"doi\":\"10.1109/EMICC.2007.4412632\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A fully differential 20 Gsample/s Track and Hold Amplifier with 20 GHz large-input-signal bandwidth is designed and fabricated in 210 GHz-fT-InP-DHBT on a 1.6 x 1.4 mm2 chip. Spectral measurements in track mode give an SNR, a THD, and a SFDR respectively of 65 dB, -38 dB and -38 dB for input frequency up to 9 GHz and input voltage up to 0.5 Vpp. This THD is equivalent to 6 ENOB. Time domain measurements illustrate 20 GHz sampling with 2 and 5 GHz sinusoidal input signals.\",\"PeriodicalId\":436391,\"journal\":{\"name\":\"2007 European Microwave Integrated Circuit Conference\",\"volume\":\"9 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2007-12-26\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"9\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2007 European Microwave Integrated Circuit Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EMICC.2007.4412632\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 European Microwave Integrated Circuit Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EMICC.2007.4412632","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 9
摘要
在1.6 x 1.4 mm2芯片上,采用210 GHz- ft -inp - dhbt设计并制造了一款具有20 GHz大输入信号带宽的全差分20 g采样/s跟踪和保持放大器。在轨道模式下,当输入频率高达9 GHz,输入电压高达0.5 Vpp时,SNR、THD和SFDR分别为65 dB、-38 dB和-38 dB。这个THD相当于6个ENOB。时域测量说明20 GHz采样与2和5 GHz正弦输入信号。
A 20-GSamples/s Track-Hold Amplifier in InP DHBT technology
A fully differential 20 Gsample/s Track and Hold Amplifier with 20 GHz large-input-signal bandwidth is designed and fabricated in 210 GHz-fT-InP-DHBT on a 1.6 x 1.4 mm2 chip. Spectral measurements in track mode give an SNR, a THD, and a SFDR respectively of 65 dB, -38 dB and -38 dB for input frequency up to 9 GHz and input voltage up to 0.5 Vpp. This THD is equivalent to 6 ENOB. Time domain measurements illustrate 20 GHz sampling with 2 and 5 GHz sinusoidal input signals.