O. Jardel, Raymond Quéré, S. Heckmann, H. Bousbia, Denis Barataud, Eric Chartier, D. Floriot
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An Electrothermal Model for GaInP/GaAs Power HBTs with Enhanced Convergence Capabilities
A new model for GaInP/GaAs power heterojunction bipolar transistors (HBT) is proposed. This non-linear electrothermal and fully scalable model was designed with closed-form equations in order to reduce simulation times in complex circuits like high power amplifiers (HPA) and to have good convergence capabilities at high compression levels. This paper presents model topology and shows parameters extraction from pulsed I-V, pulsed [S]-parameters measurements. Simulations performed on a two-stage HPA with 20 HBTs devices have demonstrated the good convergence properties as well as a good correlation with measurements
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