{"title":"步距对电迁移的影响","authors":"A. Oates","doi":"10.1109/RELPHY.1990.66055","DOIUrl":null,"url":null,"abstract":"Step spacing effects on electromigration in second-level runners of a two-level metal technology are investigated by stressing test structures with a wide range of spacing, of severe topography. Metal step coverage is affected by step spacing, and it is shown that regions with poor coverage (10, 20%) are particularly vulnerable to electromigration failure. When the interlevel dielectric processing is changed to improve step coverage, metal lifetimes do not increase to the extent expected. A new mode that occurs within a specific range of step spacing appears to dominate failure.<<ETX>>","PeriodicalId":409540,"journal":{"name":"28th Annual Proceedings on Reliability Physics Symposium","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1990-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"Step spacing effects on electromigration\",\"authors\":\"A. Oates\",\"doi\":\"10.1109/RELPHY.1990.66055\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Step spacing effects on electromigration in second-level runners of a two-level metal technology are investigated by stressing test structures with a wide range of spacing, of severe topography. Metal step coverage is affected by step spacing, and it is shown that regions with poor coverage (10, 20%) are particularly vulnerable to electromigration failure. When the interlevel dielectric processing is changed to improve step coverage, metal lifetimes do not increase to the extent expected. A new mode that occurs within a specific range of step spacing appears to dominate failure.<<ETX>>\",\"PeriodicalId\":409540,\"journal\":{\"name\":\"28th Annual Proceedings on Reliability Physics Symposium\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1990-03-27\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"28th Annual Proceedings on Reliability Physics Symposium\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/RELPHY.1990.66055\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"28th Annual Proceedings on Reliability Physics Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RELPHY.1990.66055","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Step spacing effects on electromigration in second-level runners of a two-level metal technology are investigated by stressing test structures with a wide range of spacing, of severe topography. Metal step coverage is affected by step spacing, and it is shown that regions with poor coverage (10, 20%) are particularly vulnerable to electromigration failure. When the interlevel dielectric processing is changed to improve step coverage, metal lifetimes do not increase to the extent expected. A new mode that occurs within a specific range of step spacing appears to dominate failure.<>
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
