重复短路应力对p-GaN HEMT动力学的影响

J. Kozarik, J. Marek, A. Chvála, M. Minárik
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引用次数: 0

摘要

本文给出了封装的常关断GaN hemt的部分双脉冲开关测试和动态导通电阻提取结果。在各种开关条件下对器件进行了测试。分析比较了开关参数对动态导通电阻的影响。样品暴露于重复SC应力几千次重复的开关。由于短路应力,导通电阻发生了位移,但幅度不大。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Effect of Repetitive Short-Circuit Stress on dynRdson of p-GaN HEMT
The paper presents part of results of double-pulse switching tests and extraction of dynamic on-resistance of packaged normally-off GaN HEMTs. Devices were tested under various switching conditions. Effects of the switching parameters on dynamic on-resistance were analysed and compared. Samples were exposed to repetitive SC stress for several thousand repetitions of switching. Shift of on-resistance due to short-circuit stress was observed, but not of significant magnitude.
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