{"title":"无线电超宽带接收机的电阻反馈LNA","authors":"M. Yargholi, A. P. Tarighat, M. Maghsoodi","doi":"10.1109/NCC.2012.6176794","DOIUrl":null,"url":null,"abstract":"In this paper a CMOS low noise amplifier is designed for radio ultra-wide band receivers. The design process includes; input matching network, cascoded structure, RC feedback loop, RL load and output matching network. The LNA is implemented in TSMC RF CMOS 0.18μm technology with minimum noise figure of 2.3dB, maximum gain (S21) of 15.1dB with gain flatness of 0.7, S22<;-15dB and IIP3 of - 10dBm at 3-5 GHZ bandwidth. The power dissipation is 11.4 mW while using 1.5V voltage supply.","PeriodicalId":178278,"journal":{"name":"2012 National Conference on Communications (NCC)","volume":"1949 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-04-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Resistive feedback LNA for radio ultra-wideband receivers\",\"authors\":\"M. Yargholi, A. P. Tarighat, M. Maghsoodi\",\"doi\":\"10.1109/NCC.2012.6176794\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper a CMOS low noise amplifier is designed for radio ultra-wide band receivers. The design process includes; input matching network, cascoded structure, RC feedback loop, RL load and output matching network. The LNA is implemented in TSMC RF CMOS 0.18μm technology with minimum noise figure of 2.3dB, maximum gain (S21) of 15.1dB with gain flatness of 0.7, S22<;-15dB and IIP3 of - 10dBm at 3-5 GHZ bandwidth. The power dissipation is 11.4 mW while using 1.5V voltage supply.\",\"PeriodicalId\":178278,\"journal\":{\"name\":\"2012 National Conference on Communications (NCC)\",\"volume\":\"1949 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-04-03\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2012 National Conference on Communications (NCC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/NCC.2012.6176794\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 National Conference on Communications (NCC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NCC.2012.6176794","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Resistive feedback LNA for radio ultra-wideband receivers
In this paper a CMOS low noise amplifier is designed for radio ultra-wide band receivers. The design process includes; input matching network, cascoded structure, RC feedback loop, RL load and output matching network. The LNA is implemented in TSMC RF CMOS 0.18μm technology with minimum noise figure of 2.3dB, maximum gain (S21) of 15.1dB with gain flatness of 0.7, S22<;-15dB and IIP3 of - 10dBm at 3-5 GHZ bandwidth. The power dissipation is 11.4 mW while using 1.5V voltage supply.