溅射NiCr薄膜微加热器的电学性能

The 8th Annual IEEE International Conference on Nano/Micro Engineered and Molecular Systems Pub Date : 2013-04-07 DOI:10.1109/NEMS.2013.6559771

Ting Wu, Jingquan Liu, Shui-Dong Jiang, Bin Xu, Bin Yang, Hongying Zhu, Chunsheng Yang

{"title":"溅射NiCr薄膜微加热器的电学性能","authors":"Ting Wu, Jingquan Liu, Shui-Dong Jiang, Bin Xu, Bin Yang, Hongying Zhu, Chunsheng Yang","doi":"10.1109/NEMS.2013.6559771","DOIUrl":null,"url":null,"abstract":"NiCr (80/20 at.%) thin films were deposited on SiO2/Si substrates as a cryonetic heater by DC magnetron sputtering technique. After a series of annealing treatments under various conditions, the electrical properties and microstructure of the films were investigated. The crystallinity and composition of the films were analyzed by X-ray diffraction (XRD) and scanning electron microscopy (SEM). The films are changed from crystalline to amorphous phase after annealing at 250°C in nitrogen ambient and the annealing conditions have a significant effect on the resistivity and temperature coefficient of resistance (TCR) of the films. TCR of the samples annealed at 250°C for 9 minutes in N2 shows 9.23 ppm/K at 20K which is finally confirmed as the optimal result.","PeriodicalId":308928,"journal":{"name":"The 8th Annual IEEE International Conference on Nano/Micro Engineered and Molecular Systems","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-04-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Electrical properties of micro-heaters using sputtered NiCr thin film\",\"authors\":\"Ting Wu, Jingquan Liu, Shui-Dong Jiang, Bin Xu, Bin Yang, Hongying Zhu, Chunsheng Yang\",\"doi\":\"10.1109/NEMS.2013.6559771\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"NiCr (80/20 at.%) thin films were deposited on SiO2/Si substrates as a cryonetic heater by DC magnetron sputtering technique. After a series of annealing treatments under various conditions, the electrical properties and microstructure of the films were investigated. The crystallinity and composition of the films were analyzed by X-ray diffraction (XRD) and scanning electron microscopy (SEM). The films are changed from crystalline to amorphous phase after annealing at 250°C in nitrogen ambient and the annealing conditions have a significant effect on the resistivity and temperature coefficient of resistance (TCR) of the films. TCR of the samples annealed at 250°C for 9 minutes in N2 shows 9.23 ppm/K at 20K which is finally confirmed as the optimal result.\",\"PeriodicalId\":308928,\"journal\":{\"name\":\"The 8th Annual IEEE International Conference on Nano/Micro Engineered and Molecular Systems\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-04-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"The 8th Annual IEEE International Conference on Nano/Micro Engineered and Molecular Systems\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/NEMS.2013.6559771\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"The 8th Annual IEEE International Conference on Nano/Micro Engineered and Molecular Systems","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NEMS.2013.6559771","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 3

摘要

采用直流磁控溅射技术将NiCr (80/20 at.%)薄膜作为低温加热器沉积在SiO2/Si衬底上。在不同条件下进行一系列退火处理后，研究了薄膜的电学性能和微观结构。采用x射线衍射仪(XRD)和扫描电镜(SEM)对膜的结晶度和组成进行了分析。在氮气环境中250℃退火后，薄膜由结晶变为非晶态，退火条件对薄膜的电阻率和电阻温度系数(TCR)有显著影响。在N2中250℃退火9 min后，样品的TCR在20K时为9.23 ppm/K，最终确定为最佳结果。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Electrical properties of micro-heaters using sputtered NiCr thin film

NiCr (80/20 at.%) thin films were deposited on SiO2/Si substrates as a cryonetic heater by DC magnetron sputtering technique. After a series of annealing treatments under various conditions, the electrical properties and microstructure of the films were investigated. The crystallinity and composition of the films were analyzed by X-ray diffraction (XRD) and scanning electron microscopy (SEM). The films are changed from crystalline to amorphous phase after annealing at 250°C in nitrogen ambient and the annealing conditions have a significant effect on the resistivity and temperature coefficient of resistance (TCR) of the films. TCR of the samples annealed at 250°C for 9 minutes in N2 shows 9.23 ppm/K at 20K which is finally confirmed as the optimal result.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

The 8th Annual IEEE International Conference on Nano/Micro Engineered and Molecular Systems

自引率

0.00%

发文量