PD-SOI CMOS器件的SPICE紧凑建模

Proceedings 2000 IEEE Hong Kong Electron Devices Meeting (Cat. No.00TH8503) Pub Date : 2000-06-24 DOI:10.1109/HKEDM.2000.904203

J. Kuo

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引用次数: 0

摘要

PD-SOI SPICE基于紧凑的BiCMOS电荷控制模型，包含二阶效应、电子和晶格温度，可用于深亚微米部分耗尽(PD) SOI CMOS器件的低压CMOS电路仿真。该PD-SOI SPICE在由42个PD SOI CMOS器件组成的SRAM中执行写访问关键路径的瞬态仿真，而不会出现由于扭结效应而在建模PD器件时经常遇到的收敛问题。

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SPICE compact modeling of PD-SOI CMOS devices

This paper presents PD-SOI SPICE, which is based on compact BiCMOS charge-control models and includes second-order effects, electron and lattice temperatures, for circuit simulation of low-voltage CMOS circuits using deep-submicron partially-depleted (PD) SOI CMOS devices. This PD-SOI SPICE performs transient simulation of the write-access critical path in an SRAM composed of 42 PD SOI CMOS devices without convergence problems, which are commonly encountered while modeling PD devices due to kink effects.

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来源期刊

Proceedings 2000 IEEE Hong Kong Electron Devices Meeting (Cat. No.00TH8503)

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