完整的基于表面电位的无掺杂环栅mosfet电流-电压和电容-电压铁心模型

2008 9th International Conference on Solid-State and Integrated-Circuit Technology Pub Date : 2008-12-30 DOI:10.1109/ICSICT.2008.4734530

Jin He, Yan Song, Feng Liu, Feilong Liu, Lining Zhang, Jian Zhang, Xing Zhang

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引用次数: 0

摘要

提出了一个完整的基于表面电位的圆柱形无掺杂环栅(SRG) mosfet的电流-电压和电容-电压铁心模型。该模型允许电流-电压(IV)和电容-电压(CV)特性通过一组表面电位方程来充分描述。该模型适用于所有工作区域，并通过三维数值模拟预测了SRG-MOSFET的特性。

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A complete surface potential-based current-voltage and capacitance-voltage core model for undoped surrounding-gate MOSFETs

A complete surface potential-based current-voltage and capacitance-voltage core model for cylindrical undoped surrounding-gate (SRG) MOSFETs is presented in this paper. This model allows the current-voltage (IV) and capacitance-voltage (CV) characteristics to be adequately described by a single set of the equations in terms of the surface potential. The model is valid for all operation regions and predicted SRG-MOSFET¿s characteristics by the 3-D numerical simulation.

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来源期刊

2008 9th International Conference on Solid-State and Integrated-Circuit Technology

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