{"title":"研究不同初始硅过量在SiOx中形成的硅纳米晶体的光致发光量子产率","authors":"Nguyen Xuan Chung, Rens Limpens, T. Gregorkiewicz","doi":"10.1117/12.2191105","DOIUrl":null,"url":null,"abstract":"Optical properties of silicon nanocrystals dispersed in SiO2 matrix were investigated in terms of photoluminescence quantum yield at room temperature. Two multilayer samples, prepared from substoichiometric silicon oxide layers by annealing at 1150°C were used to investigate the influence of Si concentration. Significant reduction of photoluminescence quantum yield and a very specific change of its excitation energy dependence upon variation of silicon excess are concluded from the experimental data. Possible mechanisms leading to these changes are discussed.","PeriodicalId":142821,"journal":{"name":"SPIE Optics + Photonics for Sustainable Energy","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2015-09-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"8","resultStr":"{\"title\":\"Investigating photoluminescence quantum yield of silicon nanocrystals formed in SiOx with different initial Si excess\",\"authors\":\"Nguyen Xuan Chung, Rens Limpens, T. Gregorkiewicz\",\"doi\":\"10.1117/12.2191105\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Optical properties of silicon nanocrystals dispersed in SiO2 matrix were investigated in terms of photoluminescence quantum yield at room temperature. Two multilayer samples, prepared from substoichiometric silicon oxide layers by annealing at 1150°C were used to investigate the influence of Si concentration. Significant reduction of photoluminescence quantum yield and a very specific change of its excitation energy dependence upon variation of silicon excess are concluded from the experimental data. Possible mechanisms leading to these changes are discussed.\",\"PeriodicalId\":142821,\"journal\":{\"name\":\"SPIE Optics + Photonics for Sustainable Energy\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2015-09-04\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"8\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"SPIE Optics + Photonics for Sustainable Energy\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1117/12.2191105\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"SPIE Optics + Photonics for Sustainable Energy","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1117/12.2191105","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Investigating photoluminescence quantum yield of silicon nanocrystals formed in SiOx with different initial Si excess
Optical properties of silicon nanocrystals dispersed in SiO2 matrix were investigated in terms of photoluminescence quantum yield at room temperature. Two multilayer samples, prepared from substoichiometric silicon oxide layers by annealing at 1150°C were used to investigate the influence of Si concentration. Significant reduction of photoluminescence quantum yield and a very specific change of its excitation energy dependence upon variation of silicon excess are concluded from the experimental data. Possible mechanisms leading to these changes are discussed.
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