{"title":"W波段异构集成收发器的设计与制作","authors":"Yuhong Tao, Xiao Yang, Cheng-rui Zhang, Liang Zhou","doi":"10.1109/IWS49314.2020.9360004","DOIUrl":null,"url":null,"abstract":"This paper presents the design and fabrication of W band 3-dimensional heterogeneous integration transceiver. Silicon-based X band Phase locked loop with a GaAs driver amplifier, W band SiGe transceiver and GaN power amplifier are integrated. A W band quintuple-mode filter are designed which can be integrated into the transceivers. The output power of the transceiver is about 22dBm at 94GHz.","PeriodicalId":301959,"journal":{"name":"2020 IEEE MTT-S International Wireless Symposium (IWS)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2020-09-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Design and Fabrication of W band Heterogeneous Integrated Transceivers\",\"authors\":\"Yuhong Tao, Xiao Yang, Cheng-rui Zhang, Liang Zhou\",\"doi\":\"10.1109/IWS49314.2020.9360004\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents the design and fabrication of W band 3-dimensional heterogeneous integration transceiver. Silicon-based X band Phase locked loop with a GaAs driver amplifier, W band SiGe transceiver and GaN power amplifier are integrated. A W band quintuple-mode filter are designed which can be integrated into the transceivers. The output power of the transceiver is about 22dBm at 94GHz.\",\"PeriodicalId\":301959,\"journal\":{\"name\":\"2020 IEEE MTT-S International Wireless Symposium (IWS)\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2020-09-20\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2020 IEEE MTT-S International Wireless Symposium (IWS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IWS49314.2020.9360004\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 IEEE MTT-S International Wireless Symposium (IWS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IWS49314.2020.9360004","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Design and Fabrication of W band Heterogeneous Integrated Transceivers
This paper presents the design and fabrication of W band 3-dimensional heterogeneous integration transceiver. Silicon-based X band Phase locked loop with a GaAs driver amplifier, W band SiGe transceiver and GaN power amplifier are integrated. A W band quintuple-mode filter are designed which can be integrated into the transceivers. The output power of the transceiver is about 22dBm at 94GHz.