Young-Ju Kim, Hee-Cheol Choi, Si-Wook Yoo, Seunghoon Lee, D. Chung, Kyoung-Ho Moon, Hojin Park, Jae-Whui Kim
{"title":"可重构0.5V至1.2V, 10MS/s至100MS/s，低功耗10b 0.13um CMOS流水线ADC","authors":"Young-Ju Kim, Hee-Cheol Choi, Si-Wook Yoo, Seunghoon Lee, D. Chung, Kyoung-Ho Moon, Hojin Park, Jae-Whui Kim","doi":"10.1109/CICC.2007.4405709","DOIUrl":null,"url":null,"abstract":"This work describes a re-configurable 0.5 V to 1.2 V, 10 MS/s to 100 MS/s, 10 b two-step pipeline ADC. The prototype ADC in a 0.13 um CMOS process demonstrates the measured DNL and INL within 0.35 LSB and 0.49 LSB, respectively. The ADC with an active die area of 0.98 mm2 shows the maximum SNDR and SFDR of 56.0 dB and 69.6 dB, respectively, and a power consumption of 19.2 mW at a nominal condition of 0.8 V and 60 MS/s.","PeriodicalId":130106,"journal":{"name":"2007 IEEE Custom Integrated Circuits Conference","volume":"95 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"16","resultStr":"{\"title\":\"A Re-configurable 0.5V to 1.2V, 10MS/s to 100MS/s, Low-Power 10b 0.13um CMOS Pipeline ADC\",\"authors\":\"Young-Ju Kim, Hee-Cheol Choi, Si-Wook Yoo, Seunghoon Lee, D. Chung, Kyoung-Ho Moon, Hojin Park, Jae-Whui Kim\",\"doi\":\"10.1109/CICC.2007.4405709\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This work describes a re-configurable 0.5 V to 1.2 V, 10 MS/s to 100 MS/s, 10 b two-step pipeline ADC. The prototype ADC in a 0.13 um CMOS process demonstrates the measured DNL and INL within 0.35 LSB and 0.49 LSB, respectively. The ADC with an active die area of 0.98 mm2 shows the maximum SNDR and SFDR of 56.0 dB and 69.6 dB, respectively, and a power consumption of 19.2 mW at a nominal condition of 0.8 V and 60 MS/s.\",\"PeriodicalId\":130106,\"journal\":{\"name\":\"2007 IEEE Custom Integrated Circuits Conference\",\"volume\":\"95 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2007-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"16\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2007 IEEE Custom Integrated Circuits Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CICC.2007.4405709\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 IEEE Custom Integrated Circuits Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CICC.2007.4405709","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A Re-configurable 0.5V to 1.2V, 10MS/s to 100MS/s, Low-Power 10b 0.13um CMOS Pipeline ADC
This work describes a re-configurable 0.5 V to 1.2 V, 10 MS/s to 100 MS/s, 10 b two-step pipeline ADC. The prototype ADC in a 0.13 um CMOS process demonstrates the measured DNL and INL within 0.35 LSB and 0.49 LSB, respectively. The ADC with an active die area of 0.98 mm2 shows the maximum SNDR and SFDR of 56.0 dB and 69.6 dB, respectively, and a power consumption of 19.2 mW at a nominal condition of 0.8 V and 60 MS/s.
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