π层电阻改变下GaAs π-ν-n结构电流-电压特性的变化

2009 International Siberian Conference on Control and Communications Pub Date : 2009-03-27 DOI:10.1109/SIBCON.2009.5044852

I. Prudaev, M. Skakunov, S. Khludkov

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摘要

研究了以Cr掺杂的GaAs (GaAs:Cr)和同时掺杂Cr、Fe (GaAs:Cr,Fe)的二极管的正向和反向电流电压特性(CVC)。结果表明，补偿材料降低了二极管的基极电阻，导致了静态CVC的转变和反向CVC上的负差分电阻(NDR)区域的出现。

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Transformation of current-voltage characteristics of GaAs π-ν-n-structures under modification of π-layer resistance

Results of investigation of forward and reverse current-voltage characteristics (CVC) of diodes based on GaAs doped by Cr (GaAs:Cr) and doped by Cr, Fe simultaneously (GaAs:Cr,Fe) are stated. It is shown that reduction of base resistance of diodes based on compensated material lead to transformation of static CVC and to appearance of negative differential resistance (NDR) region on reverse CVC.

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2009 International Siberian Conference on Control and Communications

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