{"title":"半导体互连用铜金属","authors":"Yi-Lung Cheng, Chih-Yen Lee, Y. Huang","doi":"10.5772/INTECHOPEN.72396","DOIUrl":null,"url":null,"abstract":"Resistance-capacitance (RC) delay produced by the interconnects limits the speed of the integrated circuits from 0.25 mm technology node. Copper (Cu) had been used to replace aluminum (Al) as an interconnecting conductor in order to reduce the resistance. In this chapter, the deposition method of Cu films and the interconnect fabrication with Cu metallization are introduced. The resulting integration and reliability challenges are addressed as well.","PeriodicalId":201297,"journal":{"name":"Noble and Precious Metals - Properties, Nanoscale Effects and Applications","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-01-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"13","resultStr":"{\"title\":\"Copper Metal for Semiconductor Interconnects\",\"authors\":\"Yi-Lung Cheng, Chih-Yen Lee, Y. Huang\",\"doi\":\"10.5772/INTECHOPEN.72396\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Resistance-capacitance (RC) delay produced by the interconnects limits the speed of the integrated circuits from 0.25 mm technology node. Copper (Cu) had been used to replace aluminum (Al) as an interconnecting conductor in order to reduce the resistance. In this chapter, the deposition method of Cu films and the interconnect fabrication with Cu metallization are introduced. The resulting integration and reliability challenges are addressed as well.\",\"PeriodicalId\":201297,\"journal\":{\"name\":\"Noble and Precious Metals - Properties, Nanoscale Effects and Applications\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-01-26\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"13\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Noble and Precious Metals - Properties, Nanoscale Effects and Applications\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.5772/INTECHOPEN.72396\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Noble and Precious Metals - Properties, Nanoscale Effects and Applications","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.5772/INTECHOPEN.72396","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Resistance-capacitance (RC) delay produced by the interconnects limits the speed of the integrated circuits from 0.25 mm technology node. Copper (Cu) had been used to replace aluminum (Al) as an interconnecting conductor in order to reduce the resistance. In this chapter, the deposition method of Cu films and the interconnect fabrication with Cu metallization are introduced. The resulting integration and reliability challenges are addressed as well.
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