考虑工艺变化的近阈值操作逻辑单元的半解析电流源建模

Q. Xie, Tiansong Cui, Yanzhi Wang, Shahin Nazarian, Massoud Pedram
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引用次数: 4

摘要

在超低电压状态下运行电路可以显著降低功耗,但也会降低电路性能。此外,它对VLSI电路中的各种变异性源具有更高的灵敏度。本文将电流源建模(CSM)技术扩展到近阈值电压区,该技术已成功地应用于VLSI电路,以实现非常高的时序分析精度。特别是,它展示了如何将非线性分析模型和低维CSM查找表结合起来,同时实现建模精度,空间和时间效率,当执行基于CSM的VLSI电路的时序分析时,工作在近阈值状态下,受工艺可变性影响。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Semi-analytical current source modeling of near-threshold operating logic cells considering process variations
Operating circuits in the ultra-low voltage regime results in significantly lower power consumption but can also degrade the circuit performance. In addition, it leads to higher sensitivity to various sources of variability in VLSI circuits. This paper extends the current source modeling (CSM) technique, which has successfully been applied to VLSI circuits to achieve very high accuracy in timing analysis, to the near-threshold voltage regime. In particular, it shows how to combine non-linear analytical models and low-dimensionality CSM lookup tables to simultaneously achieve modeling accuracy, space and time efficiency, when performing CSM-based timing analysis of VLSI circuits operating in near-threshold regime and subject to process variability effects.
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