具有富氧界面(OI-SiN)的超薄氮化硅栅极电介质,用于EOT为0.9 nm及以上的CMOS

S. Tsujikawa, T. Mine, Y. Shimamoto, O. Tonomura, R. Tsuchiya, K. Ohnishi, H. Hamamura, K. Torii, T. Onai, J. Yugami
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引用次数: 12

摘要

我们展示了一种具有富氧界面(OI-SiN)的SiN栅极电介质。在形成SiN后加入氧原子的过程,即使在EOT < 1.5 nm的区域,也能同时提高氮浓度和富氧界面。因此,我们开发了EOT为0.9 nm的OI-SiN栅极介质,具有低栅极漏电流,良好的界面性能和优异的抗硼渗透性能。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
An ultra-thin silicon nitride gate dielectric with oxygen-enriched interface (OI-SiN) for CMOS with EOT of 0.9 nm and beyond
We demonstrate a SiN gate dielectric with oxygen-enriched interface (OI-SiN). A process in which oxygen atoms are incorporated after forming SiN provides enhanced nitrogen concentration and oxygen-enriched interface simultaneously even in the region of EOT < 1.5 nm. Thus we developed an OI-SiN gate dielectric with EOT of 0.9 nm that brought about low gate leakage current, good interface properties and excellent resistance to boron penetration.
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