{"title":"SiGe中的60GHz e类功率放大器","authors":"A. Valdes-Garcia, S. Reynolds, U. Pfeiffer","doi":"10.1109/ASSCC.2006.357885","DOIUrl":null,"url":null,"abstract":"A millimeter-wave Class-E tuned power amplifier is realized in 0.13 mum SiGe BiCMOS technology. To accomplish switching-mode operation at 60GHz, the transmission line input impedance transformation network provides a low real source impedance rather than optimum power match. The prototype IC is a single-ended single stage design that operates from a 1.2V supply and employs an area of 0.98mm2. Measurement results show a saturated output power >11.1dBm with peak PAE>15% from 55-60GHz. At 58GHz it achieves a peak PAE of 20.9%, peak power gain of 4.2dB and saturated output power of 11.7dBm.","PeriodicalId":142478,"journal":{"name":"2006 IEEE Asian Solid-State Circuits Conference","volume":"19 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"36","resultStr":"{\"title\":\"A 60GHz Class-E Power Amplifier in SiGe\",\"authors\":\"A. Valdes-Garcia, S. Reynolds, U. Pfeiffer\",\"doi\":\"10.1109/ASSCC.2006.357885\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A millimeter-wave Class-E tuned power amplifier is realized in 0.13 mum SiGe BiCMOS technology. To accomplish switching-mode operation at 60GHz, the transmission line input impedance transformation network provides a low real source impedance rather than optimum power match. The prototype IC is a single-ended single stage design that operates from a 1.2V supply and employs an area of 0.98mm2. Measurement results show a saturated output power >11.1dBm with peak PAE>15% from 55-60GHz. At 58GHz it achieves a peak PAE of 20.9%, peak power gain of 4.2dB and saturated output power of 11.7dBm.\",\"PeriodicalId\":142478,\"journal\":{\"name\":\"2006 IEEE Asian Solid-State Circuits Conference\",\"volume\":\"19 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2006-11-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"36\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2006 IEEE Asian Solid-State Circuits Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ASSCC.2006.357885\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2006 IEEE Asian Solid-State Circuits Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ASSCC.2006.357885","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A millimeter-wave Class-E tuned power amplifier is realized in 0.13 mum SiGe BiCMOS technology. To accomplish switching-mode operation at 60GHz, the transmission line input impedance transformation network provides a low real source impedance rather than optimum power match. The prototype IC is a single-ended single stage design that operates from a 1.2V supply and employs an area of 0.98mm2. Measurement results show a saturated output power >11.1dBm with peak PAE>15% from 55-60GHz. At 58GHz it achieves a peak PAE of 20.9%, peak power gain of 4.2dB and saturated output power of 11.7dBm.
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