用于植入式神经刺激器的低阻宽电压范围模拟开关

Yunpu Hu, Songping Mai, Yixin Zhao, Chun Zhang
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引用次数: 1

摘要

模拟开关是神经刺激器的基本部件,在刺激的开启或关闭、电极极性的切换或电源的控制过程中起着重要的作用。在植入式刺激电路中,通常要求开关在大范围变化的电压下工作,并保持相当低的导通电阻和低电荷注入。本文提出了一种开关及其驱动系统。驱动系统可以提供稳定的高电压来驱动NMOS晶体管开关,从而解决了高压输出和低压供电的冲突。根据基于0.35um CMOS高压技术的晶体管级仿真结果,模拟开关可以实现快速(ton=70ns, toff=280ns)、低平坦电阻(平均4.5Ohm)、低电荷注入(20pC)、极低漏电流(36pA)、1.8V ~ 12V宽工作电压范围,完全满足神经刺激器的应用需求。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Low-resistance wide-voltage-range analog switch for implantable neural stimulators
Analog switch is a basic component in neural stimulators as it plays an important role in the control process of opening or closing stimulation, switching electrode polarity or power supply. In implantable stimulator circuit, the switch is usually required to work under a wide-range changing voltage and keep a fairly low on-resistance and low charge injection. In this paper, a switch and its driving system are proposed. The driving system can provide a stable high voltage to drive the NMOS transistor switch, thus solving conflicts between high voltage output and low voltage supply. According to the result from transistor-level simulation based on 0.35um CMOS high-voltage technology, the analog switch can achieve fast speed (ton=70ns, toff=280ns), low and flat resistance (4.5Ohm on average), low charge injection (20pC), extremely low current leak(36pA), and wide working voltage range from 1.8V to 12V, which completely meets the application requirement of neural stimulators.
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