广义狄利克雷原理在晶体管建模中的应用

Proceedings of SOUTHEASTCON '96 Pub Date : 1996-04-11 DOI:10.1109/SECON.1996.510104

P. Winson, A. Snider

{"title":"广义狄利克雷原理在晶体管建模中的应用","authors":"P. Winson, A. Snider","doi":"10.1109/SECON.1996.510104","DOIUrl":null,"url":null,"abstract":"We report the theory, implementation and results of using a Poisson solver to compensate the measured valuer of drain conductance and transconductance in a nonlinear MESFET so as to render them compatible with a large-signal model. The consequent restructuring of the I-V curves is exhibited.","PeriodicalId":338029,"journal":{"name":"Proceedings of SOUTHEASTCON '96","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1996-04-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Applications of a generalized Dirichlet principle to transistor modeling\",\"authors\":\"P. Winson, A. Snider\",\"doi\":\"10.1109/SECON.1996.510104\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We report the theory, implementation and results of using a Poisson solver to compensate the measured valuer of drain conductance and transconductance in a nonlinear MESFET so as to render them compatible with a large-signal model. The consequent restructuring of the I-V curves is exhibited.\",\"PeriodicalId\":338029,\"journal\":{\"name\":\"Proceedings of SOUTHEASTCON '96\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1996-04-11\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of SOUTHEASTCON '96\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SECON.1996.510104\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of SOUTHEASTCON '96","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SECON.1996.510104","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 1

摘要

本文报道了用泊松求解器对非线性MESFET的漏极电导和跨导测量值进行补偿的理论、实现和结果，使其与大信号模型兼容。随后显示了I-V曲线的重构。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Applications of a generalized Dirichlet principle to transistor modeling

We report the theory, implementation and results of using a Poisson solver to compensate the measured valuer of drain conductance and transconductance in a nonlinear MESFET so as to render them compatible with a large-signal model. The consequent restructuring of the I-V curves is exhibited.

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Proceedings of SOUTHEASTCON '96

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