{"title":"一种2-10GHz超宽带高增益负反馈低噪声放大器","authors":"Peigen Zhou, Daxu Zhang, Jixin Chen","doi":"10.1109/ICMMT.2016.7761676","DOIUrl":null,"url":null,"abstract":"This paper presents the design and implementation of a miniaturized ultra-wideband low noise amplifier (LNA) suitable for RF system. The LNA is based on negative feedback topology and reduces the size of the circuit greatly. By using a 4.7 Ω resistance in series with the drain of each transistor, the design yields excellent stability at a wide frequency band. The LNA is fabricated on a Rogers RO4003C board with size of 91.5mm*25mm. Over the wide operating frequency band of 2-10GHz, the measured results demonstrate an excellent performance with the gain of higher than 34dB, in-band flatness of less than 3.37dB, S11 of less than -10.95dB, S22 of less than -11.04dB, a low noise figure of less than 3.49dB and a low power consumption.","PeriodicalId":438795,"journal":{"name":"2016 IEEE International Conference on Microwave and Millimeter Wave Technology (ICMMT)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"A 2–10GHz ultra-wideband high gain negative feedback low-noise amplifier\",\"authors\":\"Peigen Zhou, Daxu Zhang, Jixin Chen\",\"doi\":\"10.1109/ICMMT.2016.7761676\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents the design and implementation of a miniaturized ultra-wideband low noise amplifier (LNA) suitable for RF system. The LNA is based on negative feedback topology and reduces the size of the circuit greatly. By using a 4.7 Ω resistance in series with the drain of each transistor, the design yields excellent stability at a wide frequency band. The LNA is fabricated on a Rogers RO4003C board with size of 91.5mm*25mm. Over the wide operating frequency band of 2-10GHz, the measured results demonstrate an excellent performance with the gain of higher than 34dB, in-band flatness of less than 3.37dB, S11 of less than -10.95dB, S22 of less than -11.04dB, a low noise figure of less than 3.49dB and a low power consumption.\",\"PeriodicalId\":438795,\"journal\":{\"name\":\"2016 IEEE International Conference on Microwave and Millimeter Wave Technology (ICMMT)\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-06-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 IEEE International Conference on Microwave and Millimeter Wave Technology (ICMMT)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICMMT.2016.7761676\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE International Conference on Microwave and Millimeter Wave Technology (ICMMT)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICMMT.2016.7761676","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A 2–10GHz ultra-wideband high gain negative feedback low-noise amplifier
This paper presents the design and implementation of a miniaturized ultra-wideband low noise amplifier (LNA) suitable for RF system. The LNA is based on negative feedback topology and reduces the size of the circuit greatly. By using a 4.7 Ω resistance in series with the drain of each transistor, the design yields excellent stability at a wide frequency band. The LNA is fabricated on a Rogers RO4003C board with size of 91.5mm*25mm. Over the wide operating frequency band of 2-10GHz, the measured results demonstrate an excellent performance with the gain of higher than 34dB, in-band flatness of less than 3.37dB, S11 of less than -10.95dB, S22 of less than -11.04dB, a low noise figure of less than 3.49dB and a low power consumption.