基于a类半导体激光器的光纤射频链路的超低微波加性相位噪声

G. Baili, M. Alouini, T. Malherbe, D. Dolfi, J. Huignard, F. Bretanaker, I. Sagnes, T. Merlet, J. Chazelas
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引用次数: 1

摘要

利用工作在a类波段的半导体激光器作为光源,测量了微波光子学链路的加性射频相位噪声。该激光器的相对强度噪声低于射散噪声的相对水平,在我们的实验条件下,链路的相位噪声底限为-152 dBc/Hz。因此,相位噪声底随着检测到的光电流的逆方向发展,将性能极限推向了高功率光电探测器的可用性。在3ghz载波频率低于6khz时,可以观察到一些噪声,超过了噪声上限,但在100hz偏移频率下仍低于-110 dBc/Hz。这种残余噪声主要来自技术噪声,可以通过将激光与声学/电磁扰动隔离来减少。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Ultra low microwave additive phase noise for an optical RF link based on a Class-A semiconductor laser
The additive RF phase noise of a microwave photonics link is measured using, as the optical source, a semiconductor laser operating in the Class-A regime. The relative intensity noise of this laser being below the shot noise relative level, the phase noise floor of the link is shown to be shot noise limited, -152 dBc/Hz in our experimental conditions. As a result, the phase noise floor evolves as the inverse of the detected photocurrent, pushing the limits of performance to the availability of high power photo-detectors. Below 6 kHz from the carrier frequency at 3 GHz, some noise, in excess with respect to the shot noise limit, is observed but remains lower than -110 dBc/Hz at 100 Hz offset frequency. This residual noise originates mainly from technical noise and can be reduced by isolating the laser from acoustic/electromagnetic perturbations.
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